 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| STP4953 Dual P Channel Enhancement Mode MOSFET -5.2A DESCRIPTION STP4953 is the dual P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as LCD backlight, notebook computer power management, and other battery powered circuits. PIN CONFIGURATION SOP-8 FEATURE -30V/-5.2A, RDS(ON) = 60m @VGS =-10V -30V/-4.5A, RDS(ON) = 80m @VGS = -6.0V -30V/-3.8A, RDS(ON) = 90m @VGS = -4.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOP-8 package design PART MARKING SOP-8 ORDERING INFORMATION Part Number STP4953S8RG STP4953S8TG Package SOP-8 SOP-8 Part Marking STP4953 STP4953 Process Code : A ~ Z ; a ~ z STP4953S8RG S8 : SOP-8 ; R : Tape Reel ; G : Pb - Free STP4953S8TG S8 : SOP-8 ; T : Tube ; G : Pb - Free STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright (c) 2007, Stanson Corp. STP4953 2007. V1 STP4953 Dual P Channel Enhancement Mode MOSFET -5.2A ABSOULTE MAXIMUM RATINGS (Ta = 25 Unless otherwise noted ) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ=150) Pulsed Drain Current Continuous Source Current (Diode Conduction) Power Dissipation Operation Junction Temperature Storgae Temperature Range Thermal Resistance-Junction to Ambient TA=25 TA=70 TA=25 TA=70 Symbol VDSS VGSS ID IDM IS PD TJ TSTG RJA Typical -30 20 -5.2 -4.2 -30 -2.3 2.7 1.8 -55/150 -55/150 70 Unit V V A A A W /W STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright (c) 2007, Stanson Corp. STP4953 2007. V1 STP4953 Dual P Channel Enhancement Mode MOSFET -5.2A ELECTRICAL CHARACTERISTICS ( Ta = 25 Unless otherwise noted ) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Zero Gate Voltage Drain Current On-State Drain Current Drain-source On-Resistance Forward Tran Conductance Diode Forward Voltage Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse TransferCapacitance Turn-On Time Symbol Condition Min Typ Max Unit V(BR)DSS VGS(th) IGSS IDSS TJ=55 ID(on) RDS(on) VGS=0V,ID=-250uA VDS=VGS,ID=-250 uA VDS=0V,VGS=20V VDS=-30V,VGS=0V VDS=-30V,VGS=0V VDS=-5V,VGS=10V VGS=-10V, ID=-5.2A VGS=-6.0V, ID=-4.5A VGS=-4.5V,ID=-4.0A VDS=-10V,ID=-5.0A IS=-2.0A,VGS=0V -30 -1.0 -3.0 100 -1 -5 -25 0 0.050 0.060 0.060 0.080 0.075 0.090 V V nA uA A S V gfs VSD 9.0 -0.8 -1.2 Qg Qgs Qgd Ciss Coss Crss td(on) tr 15 VDS=-15V,VGS=-10V ID-5.0A 4.0 2.0 680 VDS =-15V,VGS=0V f=1MHz 120 75 7.0 VDD=15V,RL=15 ID=-1.0A,VGEN=-10V RG=6 10 40 20 10 nC pF 15 20 80 40 nS Turn-Off Time td(off) tf STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright (c) 2007, Stanson Corp. STP4953 2007. V1 STP4953 Dual P Channel Enhancement Mode MOSFET -5.2A TYPICAL CHARACTERICTICS (25 Unless Note) STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright (c) 2007, Stanson Corp. STP4953 2007. V1 STP4953 Dual P Channel Enhancement Mode MOSFET -5.2A TYPICAL CHARACTERICTICS (25 Unless Note) STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright (c) 2007, Stanson Corp. STP4953 2007. V1 STP4953 Dual P Channel Enhancement Mode MOSFET -5.2A TYPICAL CHARACTERICTICS (25 Unless Note) STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright (c) 2007, Stanson Corp. STP4953 2007. V1 STP4953 Dual P Channel Enhancement Mode MOSFET -5.2A SOP-8 PACKAGE OUTLINE STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright (c) 2007, Stanson Corp. STP4953 2007. V1 STP4953 Dual P Channel Enhancement Mode MOSFET -5.2A STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright (c) 2007, Stanson Corp. STP4953 2007. V1 |
Price & Availability of STP4953S8TG
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |